unisonic technologies co., ltd uss4350 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r207-022.c 50v, 5a npn low v ce(sat) transistor ? description the utc uss4350 is a low v ce (sat) npn transistor designed for applications, such as: dc/dc converter, supply line switching, battery charger, linear voltage regulation, driver in low supply voltage applications and inductive load driver. ? features * collector-emitter saturation voltage:50v * high collector current gain (h fe ) under high i c conditions * high collector current capability * higher efficiency resulting in less heat generation * complementary to utc uss5350 * halogen free ? ordering information ordering number pin assignment lead free haiogen free package 1 2 3 packing uss4350l-aa3-r uss4350g-aa3-r sot-223 b c e tape reel uss4350l-ab3-r USS4350G-AB3-R sot-89 b c e tape reel
uss4350 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-022.c ? absolute maximum ratings (ta=25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v dc i c 3 a collector current peak i cm 5 a peak base current i bm 1 a sot-89 1.4 power dissipation (t c =25c) (note 2) sot-223 p d 2 w junction temperature t j 150 c operating temperature t opr -65 ~ +150 c storage temperature t stg -65 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm 2 ? thermal data parameter symbol min typ max unit sot-89 90 junction to ambient (note) sot-223 ja 62.5 c/w note: device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm 2 ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =50 v, i e =0 100 na emitter cut-off current i ebo v eb =5 v, i c =0 100 na i c =500 ma, i b =50 ma 90 mv i c =1 a, i b =50 ma 170 mv collecto r -emitter saturation voltage v ce(sat) i c =2 a, i b =200 ma (note) 290 mv base-emitter satura tion voltage v be(sat) i c =2 a, i b =200 ma (note) 1.2 v base-emitter turn -on voltage v be(on) v ce =2v; i c = 1 a (note) 1.1 v h fe1 v ce =2v, i c =500 ma 200 h fe2 v ce =2v, i c =1 a (note) 200 dc current gain h fe3 v ce =2v, i c =2 a (note) 100 equivalent on-resistance r ce(sat) i c =2 a, i b =200 ma (note) 110 <145 m ? transition frequency f t i c =100 ma, v ce =5 v, f=100 mhz 100 mhz collector capacitance c c v cb =10 v; i e =i e = 0; f =1 mhz 30 pf note: pulse test: t p 300 s; duty cycle 2%
uss4350 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-022.c ? typical characteristice sot-223 20 40 p c -t a ambient temperature, t a (c) 0160 400 800 1200 1600 2000 2400 2800 60 80 100 120 140 sot- 89 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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